4v drive nch + nch mosfet QS8K11 ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) low on-resistance. 2) high power package(tsmt8). 3) low voltage drive(4v drive). ? application switching ? packaging specifications ? inner circuit package taping code tcr basic ordering unit (pieces) 3000 QS8K11 ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss 30 v gate-source voltage v gss ? 20 v continuous i d ? 3.5 a pulsed i dp ? 12 a continuous i s 1a pulsed i sp 12 a 1.5 w / total 1.25 w / element channel temperature tch 150 ? c range of storage temperature tstg ? 55 to ? 150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 mounted on a ceramic board. p d type source current (body diode) drain current parameter power dissipation *2 *1 *1 tsmt8 (8) (7) (5)(6) (1) (2) (4)(3) (1) tr1 source (2) tr1 gate (3) tr2 source (4) tr2 gate (5) tr2 drain (6) tr2 drain (7) tr1 drain (8) tr1 drain ?1 esd protection diode ?2 body diode abbreviated symbol : k11 ?2 ?1 (8) (7) (1) (2) ?2 ?1 (6) (5) (3) (4) 1/6 2011.04 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
QS8K11 ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gatesource leakage i gss ??? 10 ? av gs = ? 20v, v ds =0v drainsource breakdown voltage v (br)dss 30 ?? vi d =1ma, v gs =0v zero gate voltage drain current i dss ?? 1 ? av ds =30v, v gs =0v gate threshold voltage v gs (th) 1.0 ? 2.5 vv ds =10v, i d =1ma ? 35 50 i d =3.5a, v gs =10v ? 45 65 i d =3.5a, v gs =4.5v ? 50 70 i d =3.5a, v gs =4.0v forward transfer admittance l y fs l 2.2 ?? si d =3.5a, v ds =10v input capacitance c iss ? 180 ? pf v ds =10v output capacitance c oss ? 70 ? pf v gs =0v reverse transfer capacitance c rss ? 35 ? pf f=1mhz turnon delay time t d(on) ? 10 ? ns i d =1.7a, v dd 15v rise time t r ? 25 ? ns v gs =10v turnoff delay time t d(off) ? 25 ? ns r l =8.87 ? fall time t f ? 7 ? ns r g =10 ? total gate charge q g ? 3.3 ? nc i d =3.5a, v dd 15v gatesource charge q gs ? 1.0 ? nc v gs =5v gatedrain charge q gd ? 1.0 ? nc *pulsed ? body diode characteristics (source-drain) (ta = 25 ?c) symbol min. typ. max. unit forward voltage v sd ?? 1.2 v is=3.5a, v gs =0v *pulsed conditions conditions m ? parameter parameter static drainsource onstate resistance r ds (on) * * * * * * * * * * * * * * * * * 2/6 2011.04 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
QS8K11 ? electrical characteristic curves (ta=25 ? c) 0 0.5 1 1.5 2 2.5 3 0 0.2 0.4 0.6 0.8 1 v gs = 2.5v t a =25 pulsed v gs = 10v v gs = 4.5v v gs = 4.0v v gs = 2.0v fig.1 typical output characteristics( ) drain current : i d [a] drain - source voltage : v ds [v] 0 0.5 1 1.5 2 2.5 3 3.5 0 2 4 6 8 10 v gs = 2.0v v gs = 10v v gs = 4.5v v gs = 4.0v v gs = 2.5v t a =25 pulsed fig.2 typical output characteristics( ) drain - source voltage : v ds [v] drain current : i d [a] 0.001 0.01 0.1 1 10 0 1 2 3 v ds = 10v pulsed t a = 125 t a = 75 c t a = 25 c t a = - 25 c fig.3 typical transfer characteristics drain current : i d [a] gate - source voltage : v gs [v] 10 100 1000 0.01 0.1 1 10 v gs = 4.0v v gs = 4.5v v gs = 10v . t a =25 pulsed fig.4 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds ( on ) [m ? ] 10 100 1000 0.1 1 10 v gs = 10v pulsed t a = 125 t a = 75 c t a = 25 c t a = - 25 c fig.5 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds ( on ) [m ? ] 10 100 1000 0.1 1 10 v gs = 4.5v pulsed t a = 125 t a = 75 c t a = 25 c t a = - 25 c fig.6 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds ( on ) [m ? ] 3/6 2011.04 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
QS8K11 10 100 1000 0.1 1 10 v gs = 4.0v pulsed t a = 125 t a = 75 c t a = 25 c t a = - 25 c fig.7 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds ( on ) [m ? ] 0.1 1 10 0.01 0.1 1 10 v ds = 10v pulsed t a = 125 t a = 75 c t a = 25 c t a = - 25 c fig.8 forward transfer admittance vs. drain current forward transfer admittance : |yfs| [s] drain - current : i d [a] 0.01 0.1 1 10 0 0.5 1 1.5 v gs =0v pulsed t a = 125 t a = 75 c t a = 25 c t a = - 25 c fig.9 reverse drain current vs. sourse - drain voltage source current : is [a] source - drain voltage : v sd [v] 0 20 40 60 80 100 0 2 4 6 8 10 i d = 3.5a i d = 1.75a t a =25 pulsed fig.10 static drain - source on - state resistance vs. gate source voltage static drain - source on - state resistance : r ds ( on ) [m ? ] gate - source voltage : v gs [v] 1 10 100 1000 10000 0.01 0.1 1 10 t f t d(on) t d(off) t a =25 c v dd =15v v gs =10v r g =10 pulsed t r fig.11 switching characteristics switching time : t [ns] drain - current : i d [a] 0 2 4 6 8 10 0 2 4 6 8 10 t a =25 c v dd = 15v i d = 3.5a r g =10 pulsed fig.12 dynamic input characteristics gate - source voltage : v gs [v] total gate charge : qg [nc] 4/6 2011.04 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
QS8K11 10 100 1000 0.01 0.1 1 10 100 c iss c rss t a =25 c f=1mhz v gs =0v c oss fig.13 typical capacitance vs. drain - source voltage drain - source voltage : v ds [v] capacitance : c [pf] 0.01 0.1 1 10 100 0.1 1 10 100 p w = 10ms dc operation operation in this area is limited by r ds(on) (v gs =10v) p w =100us p w =1ms t a =25 c single pulse : 1unit mounted on a ceramic board. (30mm 30mm 0.8mm) fig.14 maximum safe operating area drain - source voltage : v ds [v] drain current : i d (a) 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 mounted on a ceramic board. (30mm 30mm 0.8mm) rth (ch - a) =100 c /w rth (ch - a) (t)=r(t) rth (ch - a) t a =25 c single pulse : 1unit fig.15 normalized transient thermal resistance vs. pulse width pulse width : pw(s) normarized transient thermal resistance : r (t) 5/6 2011.04 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
QS8K11 ? measurement circuits ? notice this product might cause chip aging and breakdown under the large electrified environment. please consider to design esd protection circuit. v gs r g v d s d.u.t. i d r l v dd 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) v g v gs charge q g q gs q gd v gs i g(const.) v d s d.u.t. i d r l v dd fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform 6/6 2011.04 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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